LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：294

作者：

BATEY, J

TIERNEY, E

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 09期

关键词：

D O I：

10.1063/1.337726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3136 / 3145

页数：10

共 22 条

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