GROWTH AND CHARACTERIZATION OF UNDOPED AND N-TYPE (TE) DOPED MOVPE GROWN GALLIUM ANTIMONIDE

The growth of GaSb by MOVPE and its n-type doping using a dimethyltellurium dopant source are investigated. The results of growth rate, morphology and Te incorporation as a function of growth parameters are given. Increasing growth temperature and V/III reactant ratio were found to reduce the Te incorporation. The lowest Hall carrier concentrations obtained at room-temperature, on p-type and n-type MOVPE GaSb are respectively:p H= 2.2 × 1016cm-3 with a Hall mobility of μ H= 860 cm2/V.s and n H= 8.5 × 1015cm-3 with μ H= 3860 cm2/V.s. Furthermore, Hall mobilities as high as 5000 cm2/V.s were measured on n-type GaSb samples. © 1990 The Mineral,Metal & Materials Society,Inc.