SN AND TE DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS USING A SNTE SOURCE

被引：32

作者：

COLLINS, DM ^{[1
]}

MILLER, JN ^{[1
]}

CHAI, YG ^{[1
]}

CHOW, R ^{[1
]}

机构：

[1] VARIAN ASSOCIATES INC,CORP SOLID STATE LAB,PALO ALTO,CA 94303

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.331042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3010 / 3018

页数：9

共 20 条

[1] EFFECT OF ACCELERATED-GROWTH RATE (1-5 MU-M-H) ON MOLECULAR-BEAM EPITAXIAL GAAS USING SI AS A DOPANT [J].

CHAI, YG .

APPLIED PHYSICS LETTERS, 1980, 37 (04) :379-382

[2]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J].

CHO, AY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :275-284

[4] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735

[5] THERMODYNAMIC STUDY OF TIN SELENIDE + TIN TELLURIDE USING MASS SPECTROMETER [J].

COLIN, R ;

DROWART, J .

TRANSACTIONS OF THE FARADAY SOCIETY, 1964, 60 (4964) :673-&

[6] USE OF SNTE AS THE SOURCE OF DONOR IMPURITIES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

COLLINS, DM .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :67-70

[7] SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GAAS .1. TELLURIUM DOPING [J].

HURLE, DTJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (08) :627-637

[8] REVISED CALCULATION OF POINT-DEFECT EQUILIBRIA AND NONSTOICHIOMETRY IN GALLIUM-ARSENIDE [J].

HURLE, DTJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (08) :613-626

[9] SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GAAS .2. TIN-DOPING [J].

HURLE, DTJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (08) :639-646

[10] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

← 1 2 →