SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GAAS .1. TELLURIUM DOPING

The point defect model described in the companion paper is used to construct solubility relations, predict the effects of heat treatment and account for the large lattice dilations in tellurium doped GaAs. The complexing of Te donors with gallium vacancies is shown to be very important and can be used to explain electrical compensation, the formation of interstitial dislocation loops and the superdilation" of n+ material. © 1979."