SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GAAS .1. TELLURIUM DOPING

被引：94

作者：

HURLE, DTJ

机构：

[1] RSRE, Malvern, Worcs England

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1979年 / 40卷 / 08期

关键词：

D O I：

10.1016/0022-3697(79)90171-9

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The point defect model described in the companion paper is used to construct solubility relations, predict the effects of heat treatment and account for the large lattice dilations in tellurium doped GaAs. The complexing of Te donors with gallium vacancies is shown to be very important and can be used to explain electrical compensation, the formation of interstitial dislocation loops and the superdilation" of n+ material. © 1979."

引用

页码：627 / 637

页数：11

共 50 条

[11] GRISHINA SP, 1970, SOV PHYS SEMICOND+, V4, P240
[12] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE
HALL, RN
RACETTE, JH
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &
[13] REVISED CALCULATION OF POINT-DEFECT EQUILIBRIA AND NONSTOICHIOMETRY IN GALLIUM-ARSENIDE
HURLE, DTJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (08) : 613 - 626
[14] HURLE DTJ, 1977, I PHYS C SER A, V33, P113
[15] INTERSTITIAL CONDENSATION IN N+ GAAS
HUTCHINSON, PW
DOBSON, PS
[J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (09) : 1636 - 1641
[16] NATURE OF INCLUSIONS IN HEAVILY TELLURIUM-DOPED GALLIUM-ARSENIDE
HUTCHINSON, PW
BASTOW, BD
[J]. JOURNAL OF MATERIALS SCIENCE, 1974, 9 (09) : 1483 - 1492
[17] NATURE OF DEFECTS IN N+ GALLIUM-ARSENIDE
HUTCHINSON, PW
DOBSON, PS
[J]. PHILOSOPHICAL MAGAZINE, 1974, 30 (01) : 65 - 73
[18] OPTICAL PROPERTIES OF N-TYPE GAAS .2. FORMATION OF EFFICIENT HOLE TRAPS DURING ANNEALING IN TE-DOPED GAAS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4584 - &
[19] EFFECT OF HEAT TREATMENT ON PHOTOLUMINESCENCE OF TE DOPED GAAS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1983 - &
[20] KANG CS, 1968, I PHYS C SER, V7, P19

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