SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GAAS .2. TIN-DOPING

The form of the solubility curves for tin in both LPE and VPE grown GaAs are rationalised by a thermodynamic model which presumes that the dominant acceptor state due to tin is the donor-gallium vacancy complex SnGaV- Ga rather than the commonly postulated Sn- As. In LPE growth from tin-rich solutions where the arsenic concentration in the melt exceeds the gallium concentration, very low electron mobilities have been reported and this is shown to arise from auto-compensation of the Sn+ Ga donors by the SnGaV- Ga acceptors. © 1979.