ORIENTATION DEPENDENT GROWTH AND LUMINESCENCE OF SELECTIVE GAAS-SN LPE

被引:7
作者
KONIG, U
LANGMANN, U
HEIME, K
BALK, LJ
KUBALEK, E
机构
[1] RHEIN WESTFAL TH,DFG,INST HALBLEITERTECH SFB 56,D-5100 AACHEN,FED REP GER
[2] RHEIN WESTFAL TH,DFG,BASIS LAB SFB 56,D-5100 AACHEN,FED REP GER
关键词
D O I
10.1016/0022-0248(76)90229-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:165 / 170
页数:6
相关论文
共 23 条
[1]  
BENEKING H, 1968, 2ND P INT S GALL ARS
[2]  
BLUM FA, 1974, APPL PHYS LETT, V24, P430, DOI 10.1063/1.1655248
[3]  
CAWLEY AM, 1965, J APPL PHYS, V36, P3212
[4]  
Chane J. P., 1972, Journal of Crystal Growth, V13-14, P325, DOI 10.1016/0022-0248(72)90178-9
[5]   DETERMINATION OF UNDERCOOLING NECESSARY TO INITIATE EPITAXIAL-GROWTH OF GAAS FROM SOLUTION IN GA [J].
CROSSLEY, I ;
SMALL, MB .
JOURNAL OF CRYSTAL GROWTH, 1972, 15 (04) :275-&
[6]   RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J].
CUSANO, DA .
SOLID STATE COMMUNICATIONS, 1964, 2 (11) :353-358
[7]  
GALGINAITIS SV, 1970, 3RD P INT S GALL ARS
[8]   INDIUM ANTIMONIDE - A REVIEW OF ITS PREPARATION, PROPERTIES AND DEVICE APPLICATIONS [J].
HULME, KF ;
MULLIN, JB .
SOLID-STATE ELECTRONICS, 1962, 5 (JUL-A) :211-+
[10]   EFFECT OF HEAT TREATMENT ON PHOTOLUMINESCENCE OF TE DOPED GAAS [J].
HWANG, CJ .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) :1983-&