INDIUM ANTIMONIDE - A REVIEW OF ITS PREPARATION, PROPERTIES AND DEVICE APPLICATIONS

被引：136

作者：

HULME, KF

MULLIN, JB

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(62)90104-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：211 / +

页数：1

共 204 条

[1] ABRAHAMS MS, 1961, J METALS NY, V13, P77
[2] ON A NEW MODE OF DEFORMATION IN INDIUM ANTIMONIDE
ALLEN, JW
[J]. PHILOSOPHICAL MAGAZINE, 1959, 4 (45): : 1046 - 1054
[3] ON THE MECHANICAL PROPERTIES OF INDIUM ANTIMONIDE
ALLEN, JW
[J]. PHILOSOPHICAL MAGAZINE, 1957, 2 (24): : 1475 - &
[4] ANISOTROPIC SEGREGATION IN INSB
ALLRED, WP
BATE, RT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) : 258 - 261
[5] ALLRED WP, 1960, ELECTROCHEMICAL SOC, V9, P178
[6] ALTON N, 1961, ELECTROCHEM SOC M, V10, P95
[7] ELECTRON IRRADIATION OF INDIUM ANTIMONIDE
AUKERMAN, LW
[J]. PHYSICAL REVIEW, 1959, 115 (05): : 1125 - 1132
[8] RADIATION-PRODUCED ENERGY LEVELS IN COMPOUND SEMICONDUCTORS
AUKERMAN, LW
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1239 - 1243
[9] BARDSLEY W, 1957, J ELECTRON CONTR, V3, P103
[10] ESAKI DIODE IN INSB
BATDORF, RL
DACEY, GC
WALLACE, RL
WALSH, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (03) : 613 - 614