RADIATION-PRODUCED ENERGY LEVELS IN COMPOUND SEMICONDUCTORS

被引：25

作者：

AUKERMAN, LW

机构：

来源：

关键词：

D O I：

10.1063/1.1735300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1239 / 1243

页数：5

共 14 条

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[4] FAST-NEUTRON BOMBARDMENT OF GASB
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[J]. PHYSICAL REVIEW, 1955, 100 (06): : 1614 - 1618
[5] NEUTRON IRRADIATION OF INDIUM ANTIMONIDE
CLELAND, JW
CRAWFORD, JH
[J]. PHYSICAL REVIEW, 1954, 95 (05): : 1177 - 1182
[6] CLELAND JW, 1958, ORNL2614 SOL STAT DI
[7] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF INDIUM ARSENIDE
DIXON, JR
ENRIGHT, DP
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (05) : 753 - 759
[8] DIXON JR, UNPUBLISHED
[9] EISEN, 1958, WADC58428 TECH REPT
[10] EISEN FH, 1959, B AM PHYS SOC 2, V4, P160