ELECTRON-ELECTRON INTERACTION, BAND-TAILING AND ACTIVITY-COEFFICIENTS IN DOPED COMPENSATED SEMICONDUCTORS

[1] DEPENDENCE OF GROWTH PROPERTIES OF SILICON-DOPED GAAS EPITAXIAL LAYERS UPON ORIENTATION [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4512 - &

[2] BONCHBRUYEVICH VL, 1966, ELECTRONIC THEORY HE

[3] INFLUENCE OF SURFACE BAND BENDING ON INCORPORATION OF IMPURITIES IN SEMICONDUCTORS - TE IN GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (03) : 571 - +

[4] THE ELECTRONIC STRUCTURE OF DISORDERED SYSTEMS [J]. PHILOSOPHICAL MAGAZINE, 1961, 6 (65): : 617 - 638

[5] Fritzsche H., 1971, Journal of Non-Crystalline Solids, V6, P49, DOI 10.1016/0022-3093(71)90015-9

[6] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J]. PHYSICAL REVIEW, 1966, 148 (02): : 722 - +

[7] HICKS HGB, 1971, 3RD P INT S GAAS REL, P92

[8] ELECTRON ACTIVITY COEFFICIENTS IN HEAVILY DOPED SEMICONDUCTORS WITH SMALL EFFECTIVE MASS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (04) : 837 - +

[9] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &

[10] THE MODIFICATION OF ELECTRON ENERGY LEVELS BY IMPURITY ATOMS [J]. ANNALS OF PHYSICS, 1961, 14 (01) : 43 - 76

[1] DEPENDENCE OF GROWTH PROPERTIES OF SILICON-DOPED GAAS EPITAXIAL LAYERS UPON ORIENTATION [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4512 - &

[2] BONCHBRUYEVICH VL, 1966, ELECTRONIC THEORY HE

[3] INFLUENCE OF SURFACE BAND BENDING ON INCORPORATION OF IMPURITIES IN SEMICONDUCTORS - TE IN GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (03) : 571 - +

[4] THE ELECTRONIC STRUCTURE OF DISORDERED SYSTEMS [J]. PHILOSOPHICAL MAGAZINE, 1961, 6 (65): : 617 - 638

[5] Fritzsche H., 1971, Journal of Non-Crystalline Solids, V6, P49, DOI 10.1016/0022-3093(71)90015-9

[6] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J]. PHYSICAL REVIEW, 1966, 148 (02): : 722 - +

[7] HICKS HGB, 1971, 3RD P INT S GAAS REL, P92

[8] ELECTRON ACTIVITY COEFFICIENTS IN HEAVILY DOPED SEMICONDUCTORS WITH SMALL EFFECTIVE MASS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (04) : 837 - +

[9] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &

[10] THE MODIFICATION OF ELECTRON ENERGY LEVELS BY IMPURITY ATOMS [J]. ANNALS OF PHYSICS, 1961, 14 (01) : 43 - 76