ELECTRON ACTIVITY COEFFICIENTS IN HEAVILY DOPED SEMICONDUCTORS WITH SMALL EFFECTIVE MASS

[1] BEER AC, 1955, HELV PHYS ACTA, V28, P529

[2] BONCH-BRUEVICH VL, 1965, FIZ TVERD TELA+, V6, P2016

[3] BONCHBRUEVICH VL, 1966, SEMICONDUCT SEMIMET, V1, P101

[4] BREWS JR, TO BE PUBLISHED

[5] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1967, 162 (03): : 660 - +

[6] DINGLE RB, 1955, PHILOS MAG, V46, P831

[7] GELLMANN M, 1957, PHYS REV, V106, P364, DOI 10.1103/PhysRev.106.364

[8] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J]. PHYSICAL REVIEW, 1966, 148 (02): : 722 - +

[9] RELATION BETWEEN CHEMICAL POTENTIAL OF ELECTRONS AND ENERGY PARAMETERS OF BAND THEORY AS APPLIED TO SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (11) : 1545 - &

[10] CALCULATION OF FERMI ENERGY AND BANDTAIL PARAMETERS IN HEAVILY DOPED DEGENERATE NORMAL-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2668 - +

[1] BEER AC, 1955, HELV PHYS ACTA, V28, P529

[2] BONCH-BRUEVICH VL, 1965, FIZ TVERD TELA+, V6, P2016

[3] BONCHBRUEVICH VL, 1966, SEMICONDUCT SEMIMET, V1, P101

[4] BREWS JR, TO BE PUBLISHED

[5] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1967, 162 (03): : 660 - +

[6] DINGLE RB, 1955, PHILOS MAG, V46, P831

[7] GELLMANN M, 1957, PHYS REV, V106, P364, DOI 10.1103/PhysRev.106.364

[8] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J]. PHYSICAL REVIEW, 1966, 148 (02): : 722 - +

[9] RELATION BETWEEN CHEMICAL POTENTIAL OF ELECTRONS AND ENERGY PARAMETERS OF BAND THEORY AS APPLIED TO SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (11) : 1545 - &

[10] CALCULATION OF FERMI ENERGY AND BANDTAIL PARAMETERS IN HEAVILY DOPED DEGENERATE NORMAL-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2668 - +