共 24 条
- [12] KROGER FA, 1964, CHEMISTRY IMPERFECT
- [14] ELECTRON-MICROSCOPY STUDY OF EFFECTS OF ANNEALING ON DEFECT STRUCTURE OF HEAVILY SILICON-DOPED GALLIUM-ARSENIDE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02): : 657 - 669
- [15] LUMINESCENT PROPERTIES OF ENERGY-BAND-TAIL STATES IN GAAS-SI [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06): : 1830 - +
- [16] DIRECT ABSORPTION EDGE IN COVALENT SOLIDS [J]. APPLIED PHYSICS LETTERS, 1967, 11 (04) : 138 - +
- [17] Redfield D., 1972, 11TH P INT C PHYS SE, P218
- [18] CORRECTIONS TO FERMI LEVEL IN HEAVILY DOPED GAAS [J]. PHYSICAL REVIEW B, 1974, 10 (08): : 3419 - 3425
- [20] Shklovskii B. I., 1972, Soviet Physics - JETP, V35, P610