PHOTOLUMINESCENCE SPECTRA OF SN DOPED GAAS EPITAXIAL LAYERS - INFLUENCE OF EPITAXIAL PROCESS PARAMETERS

被引：3

作者：

LANGMANN, U ^{[1
]}

KONIG, U ^{[1
]}

机构：

[1] TH AACHEN,INST HALBLEITER TECH,TEMPLERGRABEN 55,51 AACHEN,FED REP GER

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1975年 / 36卷 / 10期

关键词：

D O I：

10.1016/0022-3697(75)90046-3

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

收藏

页码：1067 / 1072

页数：6

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