PROPERTIES OF SN-DOPED GAAS

被引：54

作者：

NISHIZAW.J ^{[1
]}

SHINOZAK.S ^{[1
]}

ISHIDA, K ^{[1
]}

机构：

[1] TOHOKU UNIV,RES INST ELECT COMMUN,SENDAI,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 04期

关键词：

D O I：

10.1063/1.1662424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1638 / 1645

页数：8

相关论文

共 39 条

[1] SHEET RESISTIVITY OF EPITAXIALLY GROWN GERMANIUM LAYER
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[2] RADIATION EFFECTS IN GAAS
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[3] BEHAVIOR OF LATTICE DEFECTS IN GAAS
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[4] EVIDENCE FOR EXISTENCE OF HIGH CONCENTRATIONS OF LATTICE DEFECTS IN GAAS
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[5] PRECISION LATTICE CONSTANT DETERMINATION
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[6] BRGHI L, 1970, J APPL PHYS, V41, P4665
[7] ANELASTICITY DUE TO INTRINSIC DEFECTS IN GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 631 - +
[8] SHALLOW ACCEPTOR LEVEL IN GAAS CRYSTALS RESULTING FROM CU DIFFUSION
FULLER, CS
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) : 1329 - &
[9] DEFECTS IN GAAS PRODUCED BY COPPER - GAAS-CU DEFECTS PRODUCED BY CU ENERGY ( IONIZATION ) LEVELS HALL EFFECTS RADIOCHEMICAL ANALYSIS 50-300 DEGREES K E
FULLER, CS
ALLISON, HW
WOLFSTIRN, KB
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (03) : 48 - &
[10] HALL-EFFECT LEVELS PRODUCED IN TE-DOPED GAAS CRYSTALS BY CU DIFFUSION
FULLER, CS
WOLFSTIRN, KB
ALLISON, HW
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2873 - +

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