SHEET RESISTIVITY OF EPITAXIALLY GROWN GERMANIUM LAYER

被引：20

作者：

ARIZUMI, T

NISHINAGA, T

KAKEHI, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 05期

关键词：

D O I：

10.1143/JJAP.7.468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：468 / +

页数：1

共 10 条

[1]

AKASAKI I, 1964, THESIS NAGOYA U

[2] RADIOTRACER STUDIES OF THE INCORPORATION OF IODINE INTO VAPOR-GROWN GE [J].

BAKER, WE ;

COMPTON, DMJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :269-274

[3]

HAYAKAWA H, 1965, THESIS NAGOYA U

[4] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J].

MARINACE, JC .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :248-255

[5]

RHODES RG, 1957, J ELECTRON CONTR, V3, P403

[6] RESISTIVITY CONTROL OF GE GROWN BY GE12 DISPROPORTIONATION [J].

RIBEN, AR ;

FEUCHT, DL ;

OLDHAM, WG .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (11) :3685-&

[7] VAPOR-DEPOSITED SINGLE-CRYSTAL GERMANIUM [J].

RUTH, RP ;

MARINACE, JC ;

DUNLAP, WC .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) :995-1006

[8]

Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1

[9]

1968, 2 P ICCG

[10]

[No title captured]

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