VERY HIGH-EFFICIENCY GAINASP/GAAS STRAINED-LAYER QUANTUM-WELL LASERS (LAMBDA=980 NM) WITH GAINASP OPTICAL CONFINEMENT LAYERS

被引：28

作者：

GROVES, SH

WALPOLE, JN

MISSAGGIA, LJ

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.107960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A large increase in differential quantum efficiency from 35% to >45% per facet is obtained using a GaInAsP alloy (E(g) almost-equal-to 1.65 eV), instead of GaAs, for the optical confinement layers in GaInAsP/GaAs strained-layer single quantum well separate confinement heterostructure diode lasers (lambda = 980 nm). The maximum value measured corresponds to a double-ended differential quantum efficiency of 93.4% and a slope efficiency of 1.18 mW/mA. The effective internal cavity loss in these structures is only approximately 1 cm-1.

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页码：255 / 257

页数：3

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