SELF-ALIGNED INGAAS/GAAS/INGAP QUANTUM-WELL LASERS PREPARED BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH 2 GROWTH STEPS

被引：35

作者：

CHEN, YK

WU, MC

KUO, JM

CHIN, MA

SERGENT, AM

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 23期

关键词：

D O I：

10.1063/1.105854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Index-guided self-aligned InGaAs/GaAs/InGaP quantum well lasers are fabricated by gas-source molecular beam epitaxy in two growth sequences on a GaAs substrate for the first time. The use of aluminum-free InGaP as cladding layers permits regrowth steps without the problem with the oxidation of aluminum alloys. A patterned n-InGaP current confinement layer is used to provide index guiding as well as current blocking. Preliminary results from coated 2.5-mu-m-wide and 508-mu-m-long devices show a room temperature continuous wave lasing threshold current of 12 mA with an external differential quantum efficiency of 0.68 mW/mA and a characteristic temperature of 130 K from 30 to 75-degrees-C.

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页码：2929 / 2931

页数：3

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