GAINP MASS-TRANSPORT AND GAINP/GAAS BURIED-HETEROSTRUCTURE LASERS

Mass transport of a semiconductor alloy has been demonstrated using Ga 0.51In0.49P which is lattice matched to GaAs. Buried-heterostructure diode lasers with Ga0.51In0.49P as cladding and GaAs as the active layer have been made using this fabrication technique. Initial attempts produce devices with room-temperature lasing thresholds of ∼33 mA and 15% differential power efficiency per facet.