NEW REACTOR DESIGN FOR GROWTH OF INP AND RELATED ALLOYS

[1] Geankoplis C.J., 1972, MASS TRANSPORT PHENO

[2] A RE-EXAMINATION OF BOUNDARY-LAYER THEORY FOR A HORIZONTAL CVD REACTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 619 - 622

[3] GROWTH OF MULTIPLE THIN-LAYER STRUCTURES IN THE GAAS-ALAS SYSTEM USING A NOVEL VPE REACTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 431 - 436

[4] INSTRUMENTAL ASPECTS OF ATMOSPHERIC-PRESSURE MOVPE GROWTH OF INP AND INP - GAINASP HETEROSTRUCTURES [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 340 - 346

[5] REDUCED PRESSURE MOVPE GROWTH AND CHARACTERIZATION OF GAAS/GAALAS HETEROSTRUCTURES USING A TRIETHYLGALLIUM SOURCE [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 437 - 444

[6] UNIFORM EPITAXIAL-GROWTH OF MODULATION-DOPED GAAS/GA0.7AL0.3AS ON 3-INCH SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (02): : 238 - 241

[7] USE OF FLOW VISUALIZATION AND TRACER GAS STUDIES FOR DESIGNING AN INP-INGAASP OMVPE REACTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 83 (02) : 202 - 210

[8] PALMATEER SC, 1988, JUN EL MAT C BOULD

[9] VERTICAL VERSUS HORIZONTAL REACTOR - AN OPTICAL STUDY OF THE GAS-PHASE IN A MOCVD REACTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 144 - 150

[10] FLOW VISUALIZATION STUDIES FOR OPTIMIZATION OF OMVPE REACTOR DESIGN [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 136 - 143

[1] Geankoplis C.J., 1972, MASS TRANSPORT PHENO

[2] A RE-EXAMINATION OF BOUNDARY-LAYER THEORY FOR A HORIZONTAL CVD REACTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 619 - 622

[3] GROWTH OF MULTIPLE THIN-LAYER STRUCTURES IN THE GAAS-ALAS SYSTEM USING A NOVEL VPE REACTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 431 - 436

[4] INSTRUMENTAL ASPECTS OF ATMOSPHERIC-PRESSURE MOVPE GROWTH OF INP AND INP - GAINASP HETEROSTRUCTURES [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 340 - 346

[5] REDUCED PRESSURE MOVPE GROWTH AND CHARACTERIZATION OF GAAS/GAALAS HETEROSTRUCTURES USING A TRIETHYLGALLIUM SOURCE [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 437 - 444

[6] UNIFORM EPITAXIAL-GROWTH OF MODULATION-DOPED GAAS/GA0.7AL0.3AS ON 3-INCH SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (02): : 238 - 241

[7] USE OF FLOW VISUALIZATION AND TRACER GAS STUDIES FOR DESIGNING AN INP-INGAASP OMVPE REACTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 83 (02) : 202 - 210

[8] PALMATEER SC, 1988, JUN EL MAT C BOULD

[9] VERTICAL VERSUS HORIZONTAL REACTOR - AN OPTICAL STUDY OF THE GAS-PHASE IN A MOCVD REACTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 144 - 150

[10] FLOW VISUALIZATION STUDIES FOR OPTIMIZATION OF OMVPE REACTOR DESIGN [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 136 - 143