REDUCED PRESSURE MOVPE GROWTH AND CHARACTERIZATION OF GAAS/GAALAS HETEROSTRUCTURES USING A TRIETHYLGALLIUM SOURCE

被引:35
作者
NORRIS, P
BLACK, J
ZEMON, S
LAMBERT, G
机构
关键词
D O I
10.1016/0022-0248(84)90446-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:437 / 444
页数:8
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共 17 条
  • [1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
    ASHEN, DJ
    DEAN, PJ
    HURLE, DTJ
    MULLIN, JB
    WHITE, AM
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053
  • [2] BHAT R, 1982, I PHYS C SER, V63, P101
  • [3] CALAWA A, 1981, APPL PHYS LETT, V38, P70
  • [4] CALAWA AR, 1983, ELECTRONIC MATERIALS
  • [5] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE
    DAPKUS, PD
    MANASEVIT, HM
    HESS, KL
    LOW, TS
    STILLMAN, GE
    [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 10 - 23
  • [6] Duchemin J.-P., 1979, INST PHYS CONF SE, V45, P10
  • [7] FRIJLINK PM, 1982, JAPAN J APPL PHYS, V21, pL575
  • [8] HERSEE SD, 1983, I PHYS C SER, V65, P281
  • [9] KASEMET D, 1983, I PHYS C SER, V65, P79
  • [10] Lee J.-S., UNPUB