VERTICAL VERSUS HORIZONTAL REACTOR - AN OPTICAL STUDY OF THE GAS-PHASE IN A MOCVD REACTOR

被引：51

作者：

STOCK, L

RICHTER, W

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90294-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

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页码：144 / 150

页数：7

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共 8 条

[1] De Groot S.R., 1962, NONEQUILIBRIUM THERM
[2] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR
EVERSTEYN, FC
SEVERIN, PJW
BREKEL, CHJV
PEEK, HL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 925 - +
[3] TEMPERATURES AND FLOWS IN HORIZONTAL EPI REACTORS
GILING, LJ
[J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 235 - 246
[4] H. Schlichting, 1968, BOUNDARY LAYER THEOR
[5] ON THE EFFECT OF CARRIER GAS ON GROWTH-CONDITIONS IN MOCVD REACTORS - RAMAN-STUDY OF LOCAL TEMPERATURE
KOPPITZ, M
VESTAVIK, O
PLETSCHEN, W
MIRCEA, A
HEYEN, M
RICHTER, W
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 136 - 141
[6] KOPPITZ M, 1984, SPRINGER SERIES CHEM, V39, P530
[7] GROWTH OF MULTIPLE THIN-LAYER STRUCTURES IN THE GAAS-ALAS SYSTEM USING A NOVEL VPE REACTOR
LEYS, MR
VANOPDORP, C
VIEGERS, MPA
TALENVANDERMHEEN, HJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 431 - 436
[8] THERMOPHORESIS OF PARTICLES IN A HEATED BOUNDARY-LAYER
TALBOT, L
CHENG, RK
SCHEFER, RW
WILLIS, DR
[J]. JOURNAL OF FLUID MECHANICS, 1980, 101 (DEC) : 737 - 758