TEMPERATURES AND FLOWS IN HORIZONTAL EPI REACTORS

[1] Bloem J., 1981, Third E.C. Photovoltaic Solar Energy Conference, P574

[2] CHEREPANOVA TA, 1979, FIZIKAS UN TEHNISKO, P76

[3] EFFECTS OF NATURAL AND FORCED CONVECTION IN VAPOR-PHASE GROWTH SYSTEMS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 128 - +

[4] KINETICS OF SILICON GROWTH UNDER LOW HYDROGEN PRESSURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 637 - 644

[5] GAS-FLOW PATTERNS IN HORIZONTAL EXPITAXIAL REACTOR CELLS OBSERVED BY INTERFERENCE HOLOGRAPHY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : 634 - 644

[6] CONVECTIVE INSTABILITY IN THERMAL ENTRANCE REGION OF A HORIZONTAL PARALLEL-PLATE CHANNEL HEATED FROM BELOW [J]. JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 1973, 95 (01): : 72 - 77

[7] EFFECT OF THERMAL INSTABILITY ON THERMALLY DEVELOPING LAMINAR CHANNEL FLOW [J]. JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 1976, 98 (01): : 62 - 66

[8] CHEMICAL VAPOR-DEPOSITION OF SILICON UNDER REDUCED PRESSURE IN A HOT-WALL REACTOR - EQUILIBRIUM AND KINETICS [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (03) : 659 - 672

[9] SCHLICHTING H, 1968, BOUNDARY LAYER THEOR, P177

[10] SCHLICHTING H, 1968, BOUNDARY LAYER THEOR, P432

[1] Bloem J., 1981, Third E.C. Photovoltaic Solar Energy Conference, P574

[2] CHEREPANOVA TA, 1979, FIZIKAS UN TEHNISKO, P76

[3] EFFECTS OF NATURAL AND FORCED CONVECTION IN VAPOR-PHASE GROWTH SYSTEMS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 128 - +

[4] KINETICS OF SILICON GROWTH UNDER LOW HYDROGEN PRESSURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 637 - 644

[5] GAS-FLOW PATTERNS IN HORIZONTAL EXPITAXIAL REACTOR CELLS OBSERVED BY INTERFERENCE HOLOGRAPHY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : 634 - 644

[6] CONVECTIVE INSTABILITY IN THERMAL ENTRANCE REGION OF A HORIZONTAL PARALLEL-PLATE CHANNEL HEATED FROM BELOW [J]. JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 1973, 95 (01): : 72 - 77

[7] EFFECT OF THERMAL INSTABILITY ON THERMALLY DEVELOPING LAMINAR CHANNEL FLOW [J]. JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 1976, 98 (01): : 62 - 66

[8] CHEMICAL VAPOR-DEPOSITION OF SILICON UNDER REDUCED PRESSURE IN A HOT-WALL REACTOR - EQUILIBRIUM AND KINETICS [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (03) : 659 - 672

[9] SCHLICHTING H, 1968, BOUNDARY LAYER THEOR, P177

[10] SCHLICHTING H, 1968, BOUNDARY LAYER THEOR, P432