KINETICS OF SILICON GROWTH UNDER LOW HYDROGEN PRESSURE

被引：33

作者：

DUCHEMIN, MJP

BONNET, MM

KOELSCH, MF

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 04期

关键词：

D O I：

10.1149/1.2131515

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：637 / 644

页数：8

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