EPITAXIAL-GROWTH AND PROPERTIES OF SILICON ON STOICHIOMETRIC SPINEL AND SAPPHIRE SUBSTRATES USING SILANE-HELIUM MIXTURES VS SILANE-HYDROGEN MIXTURES

被引：13

作者：

CHIANG, YS ^{[1
]}

LOONEY, GW ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 04期

关键词：

CRYSTALS - Epitaxial Growth - FILMS - Metallic - SEMICONDUCTING FILMS;

D O I：

10.1149/1.2403498

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this study, a variety of growth parameters such as surface treatment of substrate, growth temperature, and growth rate have been investigated using helium as the carrier gas. Comparison of the experimental results for silicon epitaxial growth on sapphire and stoichiometric spinel, as well as in hydrogen vs. helium, is made and discussed.

引用

页码：550 / 553

页数：4

共 12 条

[1] GROWTH OF HOMOEPITAXIAL SILICON AT LOW TEMPERATURES USING SILANE-HELIUM MIXTURES [J].