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GROWTH OF HOMOEPITAXIAL SILICON AT LOW TEMPERATURES USING SILANE-HELIUM MIXTURES
被引:17
作者
:
CHIANG, YS
论文数:
0
引用数:
0
h-index:
0
CHIANG, YS
RICHMAN, D
论文数:
0
引用数:
0
h-index:
0
RICHMAN, D
机构
:
来源
:
METALLURGICAL TRANSACTIONS
|
1971年
/ 2卷
/ 03期
关键词
:
D O I
:
10.1007/BF02662730
中图分类号
:
TF [冶金工业];
学科分类号
:
0806 ;
摘要
:
引用
收藏
页码:743 / &
相关论文
共 3 条
[1]
EPITAXIAL GROWTH OF SILICON FROM THE PYROLYSIS OF MONOSILANE ON SILICON SUBSTRATES
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
JOYCE, BA
BRADLEY, RR
论文数:
0
引用数:
0
h-index:
0
BRADLEY, RR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(12)
: 1235
-
1240
[2]
LOW-TEMPERATURE EPITAXIAL GROWTH OF SINGLE CRYSTALLINE SILICON FROM SILANE
RICHMAN, D
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, New Jersey
RICHMAN, D
ARLETT, RH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, New Jersey
ARLETT, RH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(06)
: 872
-
+
[3]
Richman D., 1969, Semiconductor silicon, P200
←
1
→
共 3 条
[1]
EPITAXIAL GROWTH OF SILICON FROM THE PYROLYSIS OF MONOSILANE ON SILICON SUBSTRATES
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
JOYCE, BA
BRADLEY, RR
论文数:
0
引用数:
0
h-index:
0
BRADLEY, RR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(12)
: 1235
-
1240
[2]
LOW-TEMPERATURE EPITAXIAL GROWTH OF SINGLE CRYSTALLINE SILICON FROM SILANE
RICHMAN, D
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, New Jersey
RICHMAN, D
ARLETT, RH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, New Jersey
ARLETT, RH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(06)
: 872
-
+
[3]
Richman D., 1969, Semiconductor silicon, P200
←
1
→