EPITAXIAL-GROWTH OF SILICON FROM SIH4 IN TEMPERATURE-RANGE 800-1150 DEGREES C

被引：45

作者：

TOWNSEND, WG ^{[1
]}

UDDIN, ME ^{[1
]}

机构：

[1] UNIV COLL SWANSEA,DEPT ELECT ENGN,SWANSEA,GLAMORGAN,WALES

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 01期

关键词：

D O I：

10.1016/0038-1101(73)90123-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：39 / 42

页数：4

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