EPITAXIAL DEPOSITION OF SILICON LAYERS BY PYROLYSIS OF SILANE

[1] ALTSCHULLER, 1955, J PHYS CHEM, V23, P761

[2] ALTSCHULLER, 1955, J AM CHEM SOC, V77, P4220

[3] BROWNSON J, 1962, MAY EL SOC M LOS ANG

[4] EPITAXIAL GROWTH OF SILICON BY HYDROGEN REDUCTION OF SIHCL3 ONTO SILICON SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) : 957 - 962

[5] HEATS OF FORMATION OF SOME UNSTABLE GASEOUS HYDRIDES [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1961, 65 (05) : 779 - &

[6] HOGNESS TR, 1956, J AM CHEM SOC, V58, P108

[7] KAHAG D, 1962, J ELECTROCHEM SOC, V109, P1106

[8] EPITAXIAL GROWTH OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) : 952 - 957

[9] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[10] ROOT CD, 1960, IRE T ELECTRON DEV, VED7, P257

[1] ALTSCHULLER, 1955, J PHYS CHEM, V23, P761

[2] ALTSCHULLER, 1955, J AM CHEM SOC, V77, P4220

[3] BROWNSON J, 1962, MAY EL SOC M LOS ANG

[4] EPITAXIAL GROWTH OF SILICON BY HYDROGEN REDUCTION OF SIHCL3 ONTO SILICON SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) : 957 - 962

[5] HEATS OF FORMATION OF SOME UNSTABLE GASEOUS HYDRIDES [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1961, 65 (05) : 779 - &

[6] HOGNESS TR, 1956, J AM CHEM SOC, V58, P108

[7] KAHAG D, 1962, J ELECTROCHEM SOC, V109, P1106

[8] EPITAXIAL GROWTH OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) : 952 - 957

[9] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[10] ROOT CD, 1960, IRE T ELECTRON DEV, VED7, P257