HIGH CHEMICAL VAPOR-DEPOSITION RATES OF EPITAXIAL SILICON LAYERS

被引：38

作者：

BLOEM, J ^{[1
]}

机构：

[1] NV PHILIPS GLOEILAMPENFABRIEKEN,SEMICOND DEV LAB,NIJMEGEN,NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1973年 / 18卷 / 01期

关键词：

D O I：

10.1016/0022-0248(73)90150-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：70 / 76

页数：7

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