CHEMICAL VAPOR-DEPOSITION OF SILICON UNDER REDUCED PRESSURE IN A HOT-WALL REACTOR - EQUILIBRIUM AND KINETICS

被引：34

作者：

LANGLAIS, F ^{[1
]}

HOTTIER, F ^{[1
]}

CADORET, R ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 03期

关键词：

D O I：

10.1016/0022-0248(82)90051-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：659 / 672

页数：14

相关论文

共 21 条

[1] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .1. DEPOSITION FROM SICL2H2 AND ETCHING BY HCL
BAN, VS
GILBERT, SL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1382 - 1388
[2] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .2. DEPOSITION FROM SICL3H AND SICL4
BAN, VS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1389 - 1391
[3] BLOEM J, 1978, CURRENT TOPICS MATER, V1, pCH4
[4] BOLLEN LJM, 1978, ACTA ELECTRON, V21, P185
[5] CADORET R, 1980, CURRENT TOPICS MATER, V5, pCH2
[6] THEORETICAL-ANALYSIS OF EQUILIBRIUM ADSORPTION LAYERS IN CVD SYSTEMS (SI-H-CL, GA-AS-H-CL)
CHERNOV, AA
RUSAIKIN, MP
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 73 - 81
[7] CHERNOV AA, 1977, SOVIET PHYS CRYST, V22
[8] RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD OF SILICON .2. THE SIH2CL2-H2-N2-HCL SYSTEM
CLAASSEN, WAP
BLOEM, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (04) : 807 - 815
[9] EPITAXIAL DEPOSITION OF SILICON IN A HOT-TUBE FURNACE
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (06) : 514 - 517
[10] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637