EPITAXIAL DEPOSITION OF SILICON IN A HOT-TUBE FURNACE

被引：12

作者：

DEAL, BE

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1962年 / 109卷 / 06期

关键词：

D O I：

10.1149/1.2425459

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：514 / 517

页数：4

共 9 条

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[4] SINGLE CRYSTAL SILICON OVERGROWTHS [J].

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[6] INTERFERENCE METHOD FOR MEASURING THICKNESS OFEPITAXIALLY GROWN FILMS [J].

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[7] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1 [J].

THEUERER, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) :649-653

[8]

THEUERER HC, 1960, P IRE, V48, P1642

[9] EPITAXIAL GROWTH OF SILICON [J].

WAJDA, ES ;

KIPPENHAN, BW ;

WHITE, WH .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :288-295

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