IMPURITY INTRODUCTION DURING EPITAXIAL GROWTH OF SILICON

被引：10

作者：

GLANG, R

KIPPENHAN, BW

机构：

来源：

关键词：

D O I：

10.1147/rd.43.0299

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：299 / 301

页数：3

共 6 条

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DEBYE, PP
KOHANE, T
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[2] DENSITOMETRIC AND ELECTRICAL INVESTIGATION OF BORON IN SILICON
HORN, FH
[J]. PHYSICAL REVIEW, 1955, 97 (06): : 1521 - 1525
[3] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON
MORIN, FJ
MAITA, JP
[J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35
[4] QUILL LL, 1950, 6 MCGRAW HILL BOOK C, P76
[5] SMITS FM, 1958, P IRE, V46, P1055
[6] EPITAXIAL GROWTH OF SILICON
WAJDA, ES
KIPPENHAN, BW
WHITE, WH
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 288 - 295