INSTRUMENTAL ASPECTS OF ATMOSPHERIC-PRESSURE MOVPE GROWTH OF INP AND INP - GAINASP HETEROSTRUCTURES

被引：37

作者：

MIRCEA, A

MELLET, R

ROSE, B

DASTE, P

SCHIAVINI, G

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(86)90321-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：340 / 346

页数：7

共 8 条

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[2] BASS SJ, 1977, PHYS C SER B, V33, P1
[3] KOMENO J, 1985, 27TH EL MAT C BOULD
[4] MELLET R, 1984, Patent No. 12788
[5] MIRCEA A, 1984, Patent No. 10154
[6] MIRCEA A, J ELECTRON MATER
[7] LOW-THRESHOLD 1.3 MU-M GAINASP-INP LASERS GROWN BY ATMOSPHERIC-PRESSURE MOVPE
ROSE, B
DEVOLDERE, P
MIRCEA, A
ROBEIN, D
TROTTE, M
[J]. ELECTRONICS LETTERS, 1985, 21 (12) : 521 - 522
[8] EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 217 - 219