LOW-THRESHOLD 1.3 MU-M GAINASP-INP LASERS GROWN BY ATMOSPHERIC-PRESSURE MOVPE

被引：6

作者：

ROSE, B

DEVOLDERE, P

MIRCEA, A

ROBEIN, D

TROTTE, M

机构：

[1] CNET, Lab de Bagneux, Bagneux, Fr, CNET, Lab de Bagneux, Bagneux, Fr

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 12期

关键词：

ATMOSPHERIC PRESSURE AND DENSITY - SEMICONDUCTING INDIUM COMPOUNDS - Growth;

D O I：

10.1049/el:19850368

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room-temperature pulse operation has been achieved at and below 1. 3 mu m for GaInAsP/InP lasers grown by atmospheric-pressure metalorganic vapor phase epitaxy (MOVPE) 1000 mu m) have been obtained.

引用

页码：521 / 522

页数：2

共 10 条

[1] GROWTH OF SEMI-INSULATING EPITAXIAL GALLIUM-ARSENIDE BY CHROMIUM DOPING IN METAL-ALKYL+HYDRIDE SYSTEM
BASS, SJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (01) : 29 - 33
[2] BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1
[3] DUCHEMIN JP, 1978, I PHYS C SER, V45, P10
[4] INGAASP/INP DOUBLE HETEROSTRUCTURE LASERS GROWN BY ATMOSPHERIC-PRESSURE MOCVD
DUPUIS, RD
TEMKIN, H
HOPKINS, LC
[J]. ELECTRONICS LETTERS, 1985, 21 (02) : 60 - 62
[5] FUKUI T, 1980, JPN J APPL PHYS, V19, P395
[6] MELLET R, 1984, Patent No. 8412788
[7] METALORGANIC INP AND INXGA1-XASYP1-Y ON INP EPITAXY AT ATMOSPHERIC-PRESSURE
MIRCEA, A
AZOULAY, R
DUGRAND, L
MELLET, R
RAO, K
SACILOTTI, M
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (03) : 603 - 620
[8] ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.23-MU-M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
RAZEGHI, M
HIRTZ, JP
HIRTZ, P
LARIVAIN, JP
BONDEAU, R
DECREMOUX, B
DUCHEMIN, JP
[J]. ELECTRONICS LETTERS, 1981, 17 (17) : 597 - 598
[9] GROWTH OF INP BY ORGANOMETALLIC VAPOR EPITAXY
SACILOTTI, M
MIRCEA, A
AZOULAY, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (01) : 111 - 115
[10] LOW THRESHOLD CURRENT-DENSITY INGAASP-INP LASERS GROWN IN A VERTICAL LIQUID-PHASE EPITAXIAL SYSTEM
TAMARI, N
BALLMAN, AA
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 185 - 189

← 1 →