学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
LOW THRESHOLD CURRENT-DENSITY INGAASP-INP LASERS GROWN IN A VERTICAL LIQUID-PHASE EPITAXIAL SYSTEM
被引:13
作者
:
TAMARI, N
论文数:
0
引用数:
0
h-index:
0
TAMARI, N
BALLMAN, AA
论文数:
0
引用数:
0
h-index:
0
BALLMAN, AA
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1981年
/ 39卷
/ 03期
关键词
:
D O I
:
10.1063/1.92696
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:185 / 189
页数:5
相关论文
共 12 条
[1]
[Anonymous], COMMUNICATION
[2]
CONDITIONS OF LPE GROWTH FOR LATTICE MATCHED GAINASP-INP DH LASERS WITH (100) SUBSTRATE IN RANGE OF 1.2-1.5-MU-M
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
KISHINO, K
KATAYAMA, S
论文数:
0
引用数:
0
h-index:
0
KATAYAMA, S
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1978,
17
(11)
: 2067
-
2068
[3]
ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M
HSIEH, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
HSIEH, JJ
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(05)
: 283
-
285
[4]
HIGH-TEMPERATURE CW OPERATION OF GAINASP-INP LASERS EMITTING AT 1.5 MU-M
HSIEH, JJ
论文数:
0
引用数:
0
h-index:
0
HSIEH, JJ
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(01)
: 25
-
27
[5]
LOW THRESHOLD CURRENT-DENSITY (100) GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR WAVELENGTH 1.3-MU-M
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
ITAYA, Y
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
SUEMATSU, Y
KATAYAMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
KATAYAMA, S
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
KISHINO, K
ARAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
ARAI, S
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(09)
: 1795
-
1805
[6]
MARTIN RA, COMMUNICATION
[7]
TEMPERATURE-DEPENDENCE OF INGAASP DOUBLE-HETEROSTRUCTURE LASER CHARACTERISTICS
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Holmdel
NAHORY, RE
POLLOCK, MA
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Holmdel
POLLOCK, MA
DEWINTER, JC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Holmdel
DEWINTER, JC
[J].
ELECTRONICS LETTERS,
1979,
15
(21)
: 695
-
696
[8]
NEAR-EQUILIBRIUM LPE GROWTH OF LOW THRESHOLD CURRENT-DENSITY IN 1-XGAXASYP1-Y (LAMBDA = 1.35-MU) DH LASERS
NELSON, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
NELSON, RJ
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(09)
: 654
-
656
[9]
LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
POLLACK, MA
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
NAHORY, RE
DEWINTER, JC
论文数:
0
引用数:
0
h-index:
0
DEWINTER, JC
BALLMAN, AA
论文数:
0
引用数:
0
h-index:
0
BALLMAN, AA
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(04)
: 314
-
316
[10]
LIQUID-PHASE EPITAXIAL-GROWTH OF 6-LAYER GAAS-(GAAL)AS STRUCTURES FOR INJECTION LASERS WITH 0.04 MU-M THICK CENTER LAYER
THOMPSON, GH
论文数:
0
引用数:
0
h-index:
0
机构:
STANDARD TELECOMMUN LABS LTD,LONDON RD,HARLOW,ESSEX,ENGLAND
STANDARD TELECOMMUN LABS LTD,LONDON RD,HARLOW,ESSEX,ENGLAND
THOMPSON, GH
KIRKBY, PA
论文数:
0
引用数:
0
h-index:
0
机构:
STANDARD TELECOMMUN LABS LTD,LONDON RD,HARLOW,ESSEX,ENGLAND
STANDARD TELECOMMUN LABS LTD,LONDON RD,HARLOW,ESSEX,ENGLAND
KIRKBY, PA
[J].
JOURNAL OF CRYSTAL GROWTH,
1974,
27
(DEC)
: 70
-
85
←
1
2
→
共 12 条
[1]
[Anonymous], COMMUNICATION
[2]
CONDITIONS OF LPE GROWTH FOR LATTICE MATCHED GAINASP-INP DH LASERS WITH (100) SUBSTRATE IN RANGE OF 1.2-1.5-MU-M
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
KISHINO, K
KATAYAMA, S
论文数:
0
引用数:
0
h-index:
0
KATAYAMA, S
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1978,
17
(11)
: 2067
-
2068
[3]
ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M
HSIEH, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
HSIEH, JJ
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(05)
: 283
-
285
[4]
HIGH-TEMPERATURE CW OPERATION OF GAINASP-INP LASERS EMITTING AT 1.5 MU-M
HSIEH, JJ
论文数:
0
引用数:
0
h-index:
0
HSIEH, JJ
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(01)
: 25
-
27
[5]
LOW THRESHOLD CURRENT-DENSITY (100) GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR WAVELENGTH 1.3-MU-M
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
ITAYA, Y
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
SUEMATSU, Y
KATAYAMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
KATAYAMA, S
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
KISHINO, K
ARAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
ARAI, S
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(09)
: 1795
-
1805
[6]
MARTIN RA, COMMUNICATION
[7]
TEMPERATURE-DEPENDENCE OF INGAASP DOUBLE-HETEROSTRUCTURE LASER CHARACTERISTICS
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Holmdel
NAHORY, RE
POLLOCK, MA
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Holmdel
POLLOCK, MA
DEWINTER, JC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Holmdel
DEWINTER, JC
[J].
ELECTRONICS LETTERS,
1979,
15
(21)
: 695
-
696
[8]
NEAR-EQUILIBRIUM LPE GROWTH OF LOW THRESHOLD CURRENT-DENSITY IN 1-XGAXASYP1-Y (LAMBDA = 1.35-MU) DH LASERS
NELSON, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
NELSON, RJ
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(09)
: 654
-
656
[9]
LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
POLLACK, MA
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
NAHORY, RE
DEWINTER, JC
论文数:
0
引用数:
0
h-index:
0
DEWINTER, JC
BALLMAN, AA
论文数:
0
引用数:
0
h-index:
0
BALLMAN, AA
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(04)
: 314
-
316
[10]
LIQUID-PHASE EPITAXIAL-GROWTH OF 6-LAYER GAAS-(GAAL)AS STRUCTURES FOR INJECTION LASERS WITH 0.04 MU-M THICK CENTER LAYER
THOMPSON, GH
论文数:
0
引用数:
0
h-index:
0
机构:
STANDARD TELECOMMUN LABS LTD,LONDON RD,HARLOW,ESSEX,ENGLAND
STANDARD TELECOMMUN LABS LTD,LONDON RD,HARLOW,ESSEX,ENGLAND
THOMPSON, GH
KIRKBY, PA
论文数:
0
引用数:
0
h-index:
0
机构:
STANDARD TELECOMMUN LABS LTD,LONDON RD,HARLOW,ESSEX,ENGLAND
STANDARD TELECOMMUN LABS LTD,LONDON RD,HARLOW,ESSEX,ENGLAND
KIRKBY, PA
[J].
JOURNAL OF CRYSTAL GROWTH,
1974,
27
(DEC)
: 70
-
85
←
1
2
→