LIQUID-PHASE EPITAXIAL-GROWTH OF 6-LAYER GAAS-(GAAL)AS STRUCTURES FOR INJECTION LASERS WITH 0.04 MU-M THICK CENTER LAYER

被引：36

作者：

THOMPSON, GH ^{[1
]}

KIRKBY, PA ^{[1
]}

机构：

[1] STANDARD TELECOMMUN LABS LTD,LONDON RD,HARLOW,ESSEX,ENGLAND

来源：

关键词：

D O I：

10.1016/S0022-0248(74)80051-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：70 / 85

页数：16

共 16 条

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[9] A STUDY OF SOLUTE DIFFUSION IN LIQUID TIN
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[10] DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/CM2
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SUMSKI, S
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (08) : 326 - &