TEMPERATURE-DEPENDENCE OF INGAASP DOUBLE-HETEROSTRUCTURE LASER CHARACTERISTICS

被引：62

作者：

NAHORY, RE

POLLOCK, MA

DEWINTER, JC

机构：

[1] Bell Laboratories, Holmdel

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 21期

关键词：

Lasers; Recombination;

D O I：

10.1049/el:19790495

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the temperature dependence of threshold for InGaAsP d.h. lasers with wavelengths from 1.23 to 1.53 µm. Our results suggest that a recombination centre, rather than carrier leakage, is responsible for the temperature sensitivity of the thresholds. © 1979, The Institution of Electrical Engineers. All rights reserved.

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页码：695 / 696

页数：2

相关论文

共 12 条

[1]

BOGATOV AP, 1976, SOV PHYS SEMICONDUCT, V9, P1282

[2]

Casey H. C., 1978, HETEROSTRUCTURE LASE, P187

[3] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR DOUBLE-HETEROJUNCTION LASERS [J].

ETTENBERG, M ;

NUESE, CJ ;

KRESSEL, H .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) :2949-2950

[4] TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J].

HORIKOSHI, Y ;

FURUKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) :809-815

[5] GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR FIBER OPTIC COMMUNICATIONS [J].

HSIEH, JJ ;

SHEN, CC .

FIBER AND INTEGRATED OPTICS, 1978, 1 (04) :357-368

[6] 1.5 MU-M INGAASP-INP DH LASER WITH OPTICAL-WAVEGUIDE STRUCTURE [J].

KOBAYASHI, N ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (05) :1005-1006

[7]

KRESSEL H, 1977, SEMICONDUCTOR LASERS, P275

[8] THRESHOLD DEPENDENCE ON ACTIVE-LAYER THICKNESS IN INGAASP-INP DH LASERS [J].

NAHORY, RE ;

POLLACK, MA .

ELECTRONICS LETTERS, 1978, 14 (23) :727-729

[9] LOW-THRESHOLD 1.25-MU-M VAPOR-GROWN INGAASP CW LASERS [J].

OLSEN, GH ;

NUESE, CJ ;

ETTENBERG, M .

APPLIED PHYSICS LETTERS, 1979, 34 (04) :262-264

[10] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J].

POLLACK, MA ;

NAHORY, RE ;

DEWINTER, JC ;

BALLMAN, AA .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :314-316