HIGH-TEMPERATURE CW OPERATION OF GAINASP-INP LASERS EMITTING AT 1.5 MU-M

被引：18

作者：

HSIEH, JJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 01期

关键词：

D O I：

10.1063/1.91688

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：25 / 27

页数：3

共 11 条

[1] ROOM-TEMPERATURE CW OPERATION OF INGAASP-INP HETEROSTRUCTURE LASERS EMITTING AT 1-56 MU-M [J].

AKIBA, S ;

SAKAI, K ;

MATSUSHIMA, Y ;

YAMAMOTO, T .

ELECTRONICS LETTERS, 1979, 15 (19) :606-607

[2]

AKIBA S, 1979, 5TH EUR C OPT COMM A

[3]

ARAI S, 1980, TOPICAL M INTEGRATED

[4] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :283-285

[5] GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR FIBER OPTIC COMMUNICATIONS [J].

HSIEH, JJ ;

SHEN, CC .

FIBER AND INTEGRATED OPTICS, 1978, 1 (04) :357-368

[6] ZN-DIFFUSED, STRIPE-GEOMETRY, DOUBLE-HETEROSTRUCTURE GALNASP-INP DIODE-LASERS [J].

HSIEH, JJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :694-697

[7]

ITAYA Y, 1980, TOPICAL M INTEGRATED

[8] SINGLE-MODE CW RIDGE-WAVEGUIDE LASER EMITTING AT 1.55 MU-M [J].

KAMINOW, IP ;

NAHORY, RE ;

POLLACK, MA ;

STULZ, LW ;

DEWINTER, JC .

ELECTRONICS LETTERS, 1979, 15 (23) :763-765

[9]

KAMINOW IP, 1980, TOPICAL M INTEGRATED

[10] ROOM-TEMPERATURE CW OPERATION OF INP-INGAASP-INP DOUBLE HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.55 MU-M [J].

KAWAGUCHI, H ;

TAKAHEI, K ;

TOYOSHIMA, Y ;

NAGAI, H ;

IWANE, G .

ELECTRONICS LETTERS, 1979, 15 (21) :669-670

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