FLOW VISUALIZATION STUDIES FOR OPTIMIZATION OF OMVPE REACTOR DESIGN

[1] CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4 [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 284 - 289

[2] METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD) OF COMPOUND SEMICONDUCTORS .1. OPTIMIZATION OF REACTOR DESIGN FOR THE PREPARATION OF ZNSE [J]. JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 1985, 81 : 2711 - 2722

[3] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 925 - +

[4] FREYMUTH P, 1983, 3RD P INT S FLOW VIS, P99

[5] GAS-FLOW PATTERNS IN HORIZONTAL EXPITAXIAL REACTOR CELLS OBSERVED BY INTERFERENCE HOLOGRAPHY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : 634 - 644

[6] MALTBY RL, 1962, 70AGARDOGRAPH, P87

[7] Merzkirch W., 1974, FLOW VISUALIZATION

[8] SCHLICHTING H, 1972, BOUNDARY LAYER THEOR

[9] SI EPITAXIAL-GROWTH OF EXTREMELY UNIFORM LAYERS BY A CONTROLLED SUPPLEMENTAL GAS ADDING SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : 1480 - 1487

[10] GAS-FLOW PATTERN AND MASS-TRANSFER ANALYSIS IN A HORIZONTAL FLOW REACTOR FOR CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1406 - +

[1] CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4 [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 284 - 289

[2] METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD) OF COMPOUND SEMICONDUCTORS .1. OPTIMIZATION OF REACTOR DESIGN FOR THE PREPARATION OF ZNSE [J]. JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 1985, 81 : 2711 - 2722

[3] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 925 - +

[4] FREYMUTH P, 1983, 3RD P INT S FLOW VIS, P99

[5] GAS-FLOW PATTERNS IN HORIZONTAL EXPITAXIAL REACTOR CELLS OBSERVED BY INTERFERENCE HOLOGRAPHY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : 634 - 644

[6] MALTBY RL, 1962, 70AGARDOGRAPH, P87

[7] Merzkirch W., 1974, FLOW VISUALIZATION

[8] SCHLICHTING H, 1972, BOUNDARY LAYER THEOR

[9] SI EPITAXIAL-GROWTH OF EXTREMELY UNIFORM LAYERS BY A CONTROLLED SUPPLEMENTAL GAS ADDING SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : 1480 - 1487

[10] GAS-FLOW PATTERN AND MASS-TRANSFER ANALYSIS IN A HORIZONTAL FLOW REACTOR FOR CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1406 - +