FABRICATION, CHARACTERIZATION, AND ANALYSIS OF MASS-TRANSPORTED GAINASP INP BURIED-HETEROSTRUCTURE LASERS

被引：47

作者：

LIAU, ZL

WALPOLE, JN

TSANG, DZ

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1984年 / 20卷 / 08期

关键词：

D O I：

10.1109/JQE.1984.1072484

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：855 / 865

页数：11

共 44 条

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[9] CARRIER LEAKAGE AND TEMPERATURE-DEPENDENCE OF INGAASP LASERS [J].

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[10] STUDY AND APPLICATION OF THE MASS-TRANSPORT PHENOMENON IN INP [J].

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JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2407-2412

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