EMBEDDED EPITAXIAL-GROWTH OF LOW-THRESHOLD GAINASP-INP INJECTION-LASERS

被引：10

作者：

CHEN, PC

YU, KL

MARGALIT, S

YARIV, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 05期

关键词：

D O I：

10.1063/1.92366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：301 / 303

页数：3

相关论文

共 8 条

[1] PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH [J].

ANTYPAS, GA .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :64-65

[2] FABRICATION AND CHARACTERIZATION OF NARROW STRIPE INGAASP-INP BURIED HETEROSTRUCTURE LASERS [J].

HIRAO, M ;

DOI, A ;

TSUJI, S ;

NAKAMURA, M ;

AIKI, K .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4539-4540

[3] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :283-285

[4] GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR FIBER OPTIC COMMUNICATIONS [J].

HSIEH, JJ ;

SHEN, CC .

FIBER AND INTEGRATED OPTICS, 1978, 1 (04) :357-368

[5] LOW-THRESHOLD ROOM-TEMPERATURE EMBEDDED HETEROSTRUCTURE LASERS [J].

LEE, CP ;

SAMID, I ;

GOVER, A ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1976, 29 (06) :365-367

[6] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J].

POLLACK, MA ;

NAHORY, RE ;

DEWINTER, JC ;

BALLMAN, AA .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :314-316

[7] EMBEDDED HETEROSTRUCTURE EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION [J].

SAMID, I ;

LEE, CP ;

GOVER, A ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1975, 27 (07) :405-407

[8] IN1-XGAXASYP1-Y-INP DH LASERS FABRICATED ON INP (100) SUBSTRATES [J].

YAMAMOTO, T ;

SAKAI, K ;

AKIBA, S ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) :95-98