A NOVEL GAINASP INP DISTRIBUTED FEEDBACK LASER

被引：29

作者：

LIAU, ZL

FLANDERS, DC

WALPOLE, JN

DEMEO, NL

机构：

[1] MIT, Lincoln Lab, Lexington, MA, USA, MIT, Lincoln Lab, Lexington, MA, USA

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 03期

关键词：

D O I：

10.1063/1.95689

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：221 / 223

页数：3

共 17 条

[1] 1.53-MU-M DFB LASERS BY MASS-TRANSPORT
BROBERG, B
KOYAMA, F
TOHMORI, Y
SUEMATSU, Y
[J]. ELECTRONICS LETTERS, 1984, 20 (17) : 692 - 694
[2] DEMEO NL, 1984, UNPUB NUCL INSTRUM M
[3] X-RAY-LITHOGRAPHY AT - 100-A LINEWIDTHS USING X-RAY MASKS FABRICATED BY SHADOWING TECHNIQUES
FLANDERS, DC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1615 - 1619
[4] LONGITUDINAL MODE BEHAVIORS OF 1.5 MU-M RANGE GAINASP-INP DISTRIBUTED FEEDBACK LASERS
ITAYA, Y
MATSUOKA, T
KUROIWA, K
IKEGAMI, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) : 230 - 235
[5] PRESERVING INP SURFACE CORRUGATIONS FOR 1.3-MU-M GAINASP-INP DFB LASERS FROM THERMAL DEFORMATION DURING LPE PROCESS
KINOSHITA, J
OKUDA, H
UEMATSU, Y
[J]. ELECTRONICS LETTERS, 1983, 19 (06) : 215 - 216
[6] LOW-THRESHOLD AND HIGH-TEMPERATURE SINGLE-LONGITUDINAL-MODE OPERATION OF 1.55-MU-M-BAND DFB-DC-PBH LDS
KITAMURA, M
YAMAGUCHI, M
MURATA, S
MITO, I
KOBAYASHI, K
[J]. ELECTRONICS LETTERS, 1984, 20 (14) : 595 - 596
[7] KOCH TL, 1984, 9TH IEEE INT SEM LAS
[8] FABRICATION, CHARACTERIZATION, AND ANALYSIS OF MASS-TRANSPORTED GAINASP INP BURIED-HETEROSTRUCTURE LASERS
LIAU, ZL
WALPOLE, JN
TSANG, DZ
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (08) : 855 - 865
[9] A NOVEL TECHNIQUE FOR GALNASP/INP BURIED HETEROSTRUCTURE LASER FABRICATION
LIAU, ZL
WALPOLE, JN
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 568 - 570
[10] PREVENTION OF SURFACE CORRUGATION THERMAL DEFORMATION FOR INGAASP/INP DFB LASERS
NAGAI, H
NOGUCHI, Y
MATSUOKA, T
SUZUKI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (05): : L291 - L293

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