1.53-MU-M DFB LASERS BY MASS-TRANSPORT

[1] LOW THRESHOLD INGAASP TERRACE MASS-TRANSPORT LASER ON SEMI-INSULATING SUBSTRATE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (12) : 1115 - 1117

[2] STUDY AND APPLICATION OF THE MASS-TRANSPORT PHENOMENON IN INP [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2407 - 2412

[3] SELECTIVE LOW-TEMPERATURE MASS-TRANSPORT IN INGAASP INP LASERS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 403 - 405

[4] HIGH-POWER SINGLE-LONGITUDINAL-MODE OPERATION OF 1.3-MU-M DFB-DC-PBH LD [J]. ELECTRONICS LETTERS, 1983, 19 (20) : 840 - 841

[5] A NOVEL TECHNIQUE FOR GALNASP/INP BURIED HETEROSTRUCTURE LASER FABRICATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 568 - 570

[6] CW OPERATION OF DFB-BH GAINASP INP LASERS IN 1,5-MU-M WAVELENGTH REGION [J]. ELECTRONICS LETTERS, 1982, 18 (01) : 27 - 28

[7] SUEMATSU Y, 1983, J LIGHTWAVE TECHNOL, V1, P161

[8] 1.5 MU-M WAVELENGTH GAINASP-C-3 LASERS - SINGLE-FREQUENCY OPERATION AND WIDEBAND FREQUENCY TUNING [J]. ELECTRONICS LETTERS, 1983, 19 (11) : 415 - 417

[9] 1.5-1.6-MU-M GAINASP-INP INTEGRATED TWIN-GUIDE LASERS WITH 1ST-ORDER DISTRIBUTED BRAGG REFLECTORS [J]. ELECTRONICS LETTERS, 1980, 16 (12) : 455 - 456

[10] ROOM-TEMPERATURE CW OPERATION OF DISTRIBUTED-FEEDBACK BURIED-HETEROSTRUCTURE INGAASP INP LASERS EMITTING AT 1.57 MU-M [J]. ELECTRONICS LETTERS, 1981, 17 (25-2) : 961 - 963

[1] LOW THRESHOLD INGAASP TERRACE MASS-TRANSPORT LASER ON SEMI-INSULATING SUBSTRATE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (12) : 1115 - 1117

[2] STUDY AND APPLICATION OF THE MASS-TRANSPORT PHENOMENON IN INP [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2407 - 2412

[3] SELECTIVE LOW-TEMPERATURE MASS-TRANSPORT IN INGAASP INP LASERS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 403 - 405

[4] HIGH-POWER SINGLE-LONGITUDINAL-MODE OPERATION OF 1.3-MU-M DFB-DC-PBH LD [J]. ELECTRONICS LETTERS, 1983, 19 (20) : 840 - 841

[5] A NOVEL TECHNIQUE FOR GALNASP/INP BURIED HETEROSTRUCTURE LASER FABRICATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 568 - 570

[6] CW OPERATION OF DFB-BH GAINASP INP LASERS IN 1,5-MU-M WAVELENGTH REGION [J]. ELECTRONICS LETTERS, 1982, 18 (01) : 27 - 28

[7] SUEMATSU Y, 1983, J LIGHTWAVE TECHNOL, V1, P161

[8] 1.5 MU-M WAVELENGTH GAINASP-C-3 LASERS - SINGLE-FREQUENCY OPERATION AND WIDEBAND FREQUENCY TUNING [J]. ELECTRONICS LETTERS, 1983, 19 (11) : 415 - 417

[9] 1.5-1.6-MU-M GAINASP-INP INTEGRATED TWIN-GUIDE LASERS WITH 1ST-ORDER DISTRIBUTED BRAGG REFLECTORS [J]. ELECTRONICS LETTERS, 1980, 16 (12) : 455 - 456

[10] ROOM-TEMPERATURE CW OPERATION OF DISTRIBUTED-FEEDBACK BURIED-HETEROSTRUCTURE INGAASP INP LASERS EMITTING AT 1.57 MU-M [J]. ELECTRONICS LETTERS, 1981, 17 (25-2) : 961 - 963