HIGH-POWER SINGLE-LONGITUDINAL-MODE OPERATION OF 1.3-MU-M DFB-DC-PBH LD

被引：26

作者：

KITAMURA, M

SEKI, M

YAMAGUCHI, M

MITO, I

KOBAYASHI, K

MATSUOKA, T

机构：

[1] NEC CORP, OPT ELECTR RES LABS, KAWASAKI 213, JAPAN

[2] NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LAB, ATSUGI 24301, JAPAN

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 20期

关键词：

D O I：

10.1049/el:19830572

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：840 / 841

页数：2

共 7 条

[1] ROOM-TEMPERATURE CW OPERATION OF 1.60 MU-M GAINASP INP BURIED-HETEROSTRUCTURE INTEGRATED LASER WITH BUTT JOINTED BUILT IN DISTRIBUTED BRAGG REFLECTION WAVEGUIDE [J].

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KOYAMA, F ;

MATSUMOTO, K ;

WATANABE, T ;

SUEMATSU, Y .

ELECTRONICS LETTERS, 1982, 18 (10) :410-411

[2] NEW 1.5 MU-M WAVELENGTH GAINASP INP DISTRIBUTED FEEDBACK LASER [J].

ITAYA, Y ;

MATSUOKA, T ;

NAKANO, Y ;

SUZUKI, Y ;

KUROIWA, K ;

IKEGAMI, T .

ELECTRONICS LETTERS, 1982, 18 (23) :1006-1008

[3]

ITAYA Y, 1983, 4TH IOOC TOK

[4] CW OPERATION OF DFB-BH GAINASP INP LASERS IN 1,5-MU-M WAVELENGTH REGION [J].

MATSUOKA, T ;

NAGAI, H ;

ITAYA, Y ;

NOGUCHI, Y ;

SUZUKI, Y ;

IKEGAMI, T .

ELECTRONICS LETTERS, 1982, 18 (01) :27-28

[5]

MITO I, 1983, J LIGHTWAVE TECHNOL, V1, P195

[6]

UEMATSU Y, 1982, ELECTRON LETT, V18, P857, DOI 10.1049/el:19820581

[7] ROOM-TEMPERATURE CW OPERATION OF DISTRIBUTED-FEEDBACK BURIED-HETEROSTRUCTURE INGAASP INP LASERS EMITTING AT 1.57 MU-M [J].

UTAKA, K ;

AKIBA, S ;

SAKAI, K ;

MATSUSHIMA, Y .

ELECTRONICS LETTERS, 1981, 17 (25-2) :961-963

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