共 8 条
- [1] GAINASP INP INTEGRATED LASER WITH BUTT-JOINTED BUILT-IN DISTRIBUTED-BRAGG-REFLECTION WAVEGUIDE[J]. ELECTRONICS LETTERS, 1981, 17 (25-2) : 945 - 947ABE, YKISHINO, KSUEMATSU, YARAI, S
- [2] 1.6 MU-M WAVELENGTH GAINASP-INP LASERS PREPARED BY 2-PHASE SOLUTION TECHNIQUE[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 635 - 640ITAYA, YARAI, SKISHINO, KASADA, MSUEMATSU, Y
- [3] WAVELENGTH VARIATION OF 1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP INP LASERS DUE TO DIRECT MODULATION[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (03) : 343 - 351KISHINO, KAOKI, SSUEMATSU, Y
- [4] CW OPERATION OF 1.5 - 1.6 MU-M WAVELENGTH GAINASP-INP BURIED-HETEROSTRUCTURE INTEGRATED TWIN-GUIDE LASER WITH DISTRIBUTED BRAGG REFLECTOR[J]. ELECTRONICS LETTERS, 1981, 17 (11) : 366 - 368KOBAYASHI, KUTAKA, KABE, YSUEMATSU, Y
- [5] DYNAMIC SPECTRAL WIDTH OF RAPIDLY MODULATED 1.58 MU-M GALNASP/INP BURIED-HETEROSTRUCTURE DISTRIBUTED-BRAGG-REFLECTOR INTEGRATED-TWIN-GUIDE LASERS[J]. ELECTRONICS LETTERS, 1981, 17 (25-2) : 938 - 940KOYAMA, FARAI, ASUEMATSU, YKISHINO, K
- [6] CW OPERATION OF DFB-BH GAINASP INP LASERS IN 1,5-MU-M WAVELENGTH REGION[J]. ELECTRONICS LETTERS, 1982, 18 (01) : 27 - 28MATSUOKA, TNAGAI, HITAYA, YNOGUCHI, YSUZUKI, YIKEGAMI, T
- [7] ROOM-TEMPERATURE CW OPERATION OF DISTRIBUTED-FEEDBACK BURIED-HETEROSTRUCTURE INGAASP INP LASERS EMITTING AT 1.57 MU-M[J]. ELECTRONICS LETTERS, 1981, 17 (25-2) : 961 - 963UTAKA, KAKIBA, SSAKAI, KMATSUSHIMA, Y
- [8] SINGLE-WAVELENGTH OPERATION OF 1.53-MU-M GAINASP-INP BURIED-HETEROSTRUCTURE INTEGRATED TWIN-GUIDE LASER WITH DISTRIBUTED BRAGG REFLECTOR UNDER DIRECT MODULATION UP TO 1 GHZ[J]. ELECTRONICS LETTERS, 1981, 17 (11) : 368 - 369UTAKA, KKOBAYASHI, KKOYAMA, FABE, YSUEMATSU, Y