1.6 MU-M WAVELENGTH GAINASP-INP LASERS PREPARED BY 2-PHASE SOLUTION TECHNIQUE

被引:12
作者
ITAYA, Y
ARAI, S
KISHINO, K
ASADA, M
SUEMATSU, Y
机构
关键词
D O I
10.1109/JQE.1981.1071159
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:635 / 640
页数:6
相关论文
共 19 条
[1]   THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION [J].
ADAMS, AR ;
ASADA, M ;
SUEMATSU, Y ;
ARAI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L621-L624
[2]   1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY [J].
ARAI, S ;
SUEMATSU, Y ;
ITAYA, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :197-205
[3]   1.67-MU-M GA0.47IN0.53AS-INP DH LASERS DOUBLE CLADDED WITH INP BY LPE TECHNIQUE [J].
ARAI, S ;
SUEMATSU, Y ;
ITAYA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (03) :709-710
[4]   NEW 1-6-MU-M WAVELENGTH GAINASP-INP BURIED HETEROSTRUCTURE LASERS [J].
ARAI, S ;
ASADA, M ;
SUEMATSU, Y ;
ITAYA, Y ;
TANBUNEK, T ;
KISHINO, K .
ELECTRONICS LETTERS, 1980, 16 (10) :349-350
[5]   HALL EFFECT AND RESISTIVITY OF ZN-DOPED GAAS [J].
ERMANIS, F ;
WOLFSTIR.K .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) :1963-&
[6]   TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J].
HORIKOSHI, Y ;
FURUKAWA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) :809-815
[7]   HIGH-TEMPERATURE CW OPERATION OF GAINASP-INP LASERS EMITTING AT 1.5 MU-M [J].
HSIEH, JJ .
APPLIED PHYSICS LETTERS, 1980, 37 (01) :25-27
[8]   1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP-INP LASERS [J].
ITAYA, Y ;
TANBUNEK, T ;
KISHINO, K ;
ARAI, S ;
SUEMATSU, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) :L141-L144
[9]   LOW THRESHOLD CURRENT-DENSITY (100) GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR WAVELENGTH 1.3-MU-M [J].
ITAYA, Y ;
SUEMATSU, Y ;
KATAYAMA, S ;
KISHINO, K ;
ARAI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (09) :1795-1805
[10]  
JOHNSTON WD, 1980, 38TH ANN DEV RES C