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1.6 MU-M WAVELENGTH GAINASP-INP LASERS PREPARED BY 2-PHASE SOLUTION TECHNIQUE
被引:12
作者
:
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
KISHINO, K
ASADA, M
论文数:
0
引用数:
0
h-index:
0
ASADA, M
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
机构
:
来源
:
IEEE JOURNAL OF QUANTUM ELECTRONICS
|
1981年
/ 17卷
/ 05期
关键词
:
D O I
:
10.1109/JQE.1981.1071159
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:635 / 640
页数:6
相关论文
共 19 条
[1]
THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION
[J].
ADAMS, AR
论文数:
0
引用数:
0
h-index:
0
ADAMS, AR
;
ASADA, M
论文数:
0
引用数:
0
h-index:
0
ASADA, M
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
;
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(10)
:L621
-L624
[2]
1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY
[J].
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1980,
16
(02)
:197
-205
[3]
1.67-MU-M GA0.47IN0.53AS-INP DH LASERS DOUBLE CLADDED WITH INP BY LPE TECHNIQUE
[J].
ARAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
ARAI, S
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
SUEMATSU, Y
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
ITAYA, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(03)
:709
-710
[4]
NEW 1-6-MU-M WAVELENGTH GAINASP-INP BURIED HETEROSTRUCTURE LASERS
[J].
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
;
ASADA, M
论文数:
0
引用数:
0
h-index:
0
ASADA, M
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
;
TANBUNEK, T
论文数:
0
引用数:
0
h-index:
0
TANBUNEK, T
;
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
KISHINO, K
.
ELECTRONICS LETTERS,
1980,
16
(10)
:349
-350
[5]
HALL EFFECT AND RESISTIVITY OF ZN-DOPED GAAS
[J].
ERMANIS, F
论文数:
0
引用数:
0
h-index:
0
ERMANIS, F
;
WOLFSTIR.K
论文数:
0
引用数:
0
h-index:
0
WOLFSTIR.K
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(05)
:1963
-&
[6]
TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS
[J].
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
The Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokyo, Musashino-shi
HORIKOSHI, Y
;
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
The Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokyo, Musashino-shi
FURUKAWA, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(04)
:809
-815
[7]
HIGH-TEMPERATURE CW OPERATION OF GAINASP-INP LASERS EMITTING AT 1.5 MU-M
[J].
HSIEH, JJ
论文数:
0
引用数:
0
h-index:
0
HSIEH, JJ
.
APPLIED PHYSICS LETTERS,
1980,
37
(01)
:25
-27
[8]
1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP-INP LASERS
[J].
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
;
TANBUNEK, T
论文数:
0
引用数:
0
h-index:
0
TANBUNEK, T
;
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
KISHINO, K
;
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(03)
:L141
-L144
[9]
LOW THRESHOLD CURRENT-DENSITY (100) GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR WAVELENGTH 1.3-MU-M
[J].
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
ITAYA, Y
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
SUEMATSU, Y
;
KATAYAMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
KATAYAMA, S
;
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
KISHINO, K
;
ARAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
ARAI, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(09)
:1795
-1805
[10]
JOHNSTON WD, 1980, 38TH ANN DEV RES C
←
1
2
→
共 19 条
[1]
THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION
[J].
ADAMS, AR
论文数:
0
引用数:
0
h-index:
0
ADAMS, AR
;
ASADA, M
论文数:
0
引用数:
0
h-index:
0
ASADA, M
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
;
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(10)
:L621
-L624
[2]
1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY
[J].
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1980,
16
(02)
:197
-205
[3]
1.67-MU-M GA0.47IN0.53AS-INP DH LASERS DOUBLE CLADDED WITH INP BY LPE TECHNIQUE
[J].
ARAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
ARAI, S
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
SUEMATSU, Y
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
ITAYA, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(03)
:709
-710
[4]
NEW 1-6-MU-M WAVELENGTH GAINASP-INP BURIED HETEROSTRUCTURE LASERS
[J].
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
;
ASADA, M
论文数:
0
引用数:
0
h-index:
0
ASADA, M
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
;
TANBUNEK, T
论文数:
0
引用数:
0
h-index:
0
TANBUNEK, T
;
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
KISHINO, K
.
ELECTRONICS LETTERS,
1980,
16
(10)
:349
-350
[5]
HALL EFFECT AND RESISTIVITY OF ZN-DOPED GAAS
[J].
ERMANIS, F
论文数:
0
引用数:
0
h-index:
0
ERMANIS, F
;
WOLFSTIR.K
论文数:
0
引用数:
0
h-index:
0
WOLFSTIR.K
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(05)
:1963
-&
[6]
TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS
[J].
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
The Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokyo, Musashino-shi
HORIKOSHI, Y
;
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
The Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokyo, Musashino-shi
FURUKAWA, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(04)
:809
-815
[7]
HIGH-TEMPERATURE CW OPERATION OF GAINASP-INP LASERS EMITTING AT 1.5 MU-M
[J].
HSIEH, JJ
论文数:
0
引用数:
0
h-index:
0
HSIEH, JJ
.
APPLIED PHYSICS LETTERS,
1980,
37
(01)
:25
-27
[8]
1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP-INP LASERS
[J].
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
;
TANBUNEK, T
论文数:
0
引用数:
0
h-index:
0
TANBUNEK, T
;
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
KISHINO, K
;
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(03)
:L141
-L144
[9]
LOW THRESHOLD CURRENT-DENSITY (100) GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR WAVELENGTH 1.3-MU-M
[J].
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
ITAYA, Y
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
SUEMATSU, Y
;
KATAYAMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
KATAYAMA, S
;
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
KISHINO, K
;
ARAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
ARAI, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(09)
:1795
-1805
[10]
JOHNSTON WD, 1980, 38TH ANN DEV RES C
←
1
2
→