HIGH-POWER OPERATION OF BURIED-HETEROSTRUCTURE STRAINED-LAYER INGAAS/GAAS SINGLE QUANTUM-WELL LASERS

被引：18

作者：

CHEN, TR

ENG, LE

ZHUANG, YH

XU, YJ

ZAREN, H

YARIV, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 26期

关键词：

D O I：

10.1063/1.103779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Very high power levels (330 mW) were obtained from single waveguide, single quantum well InGaAs/GaAs lasers. The lasers are shown to possess superior current threshold, temperature and optical damage characteristics.

引用

页码：2762 / 2763

页数：2

共 3 条

[1] SUBMILLIAMPERE THRESHOLD CURRENT PSEUDOMORPHIC INGAAS/ALGAAS BURIED-HETEROSTRUCTURE QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ENG, LE ;

CHEN, TR ;

SANDERS, S ;

ZHUANG, YH ;

ZHAO, B ;

YARIV, A ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1989, 55 (14) :1378-1379

[2]

LARSSON A, 1990, 1990 C LAS EL CLEO A, P32

[3] CONTINUOUS OPERATION OF HIGH-POWER (200 MW) STRAINED-LAYER GA1-XINXAS/GAAS QUANTUM-WELL LASERS WITH EMISSION WAVELENGTHS 0.87 LESS-THAN-OR-EQUAL TO LAMBDA LESS-THAN-OR-EQUAL TO 0.95 MU-M [J].

STUTIUS, W ;

GAVRILOVIC, P ;

WILLIAMS, JE ;

MEEHAN, K ;

ZARRABI, JH .

ELECTRONICS LETTERS, 1988, 24 (24) :1493-1494

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