CONTINUOUS OPERATION OF HIGH-POWER (200 MW) STRAINED-LAYER GA1-XINXAS/GAAS QUANTUM-WELL LASERS WITH EMISSION WAVELENGTHS 0.87 LESS-THAN-OR-EQUAL TO LAMBDA LESS-THAN-OR-EQUAL TO 0.95 MU-M

被引：34

作者：

STUTIUS, W

GAVRILOVIC, P

WILLIAMS, JE

MEEHAN, K

ZARRABI, JH

机构：

[1] Polaroid Corp, United States

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 24期

关键词：

D O I：

10.1049/el:19881019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1493 / 1494

页数：2

共 11 条

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LAIDIG, WD ;

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[2] HIGH-POWER PHASE-LOCKED INGAAS STRAINED-LAYER QUANTUM WELL HETEROSTRUCTURE PERIODIC LASER ARRAY [J].

BAILLARGEON, JN ;

YORK, PK ;

ZMUDZINSKI, CA ;

FERNANDEZ, GE ;

BEERNINK, KJ ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1988, 53 (06) :457-459

[3] LASER TRANSITION AND WAVELENGTH LIMITS OF GAAS [J].

DAPKUS, PD ;

HOLONYAK, N ;

ROSSI, JA ;

WILLIAMS, FV ;

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[4] GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1986, 49 (24) :1659-1660

[5] RIDGE WAVE-GUIDE INJECTION-LASER WITH A GALNAS STRAINED-LAYER QUANTUM-WELL (LAMBDA=1-MU-M) [J].

FISCHER, SE ;

FEKETE, D ;

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BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :714-716

[6] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J].

GOURLEY, PL ;

FRITZ, IJ ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :377-379

[7] PHOTOPUMPED LASER OPERATION OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES WITH SE AND MG SHEET DOPING [J].

KALISKI, RW ;

HOLONYAK, N ;

HSIEH, KC ;

NAM, DW ;

BURNHAM, RD ;

EPLER, JE ;

THORNTON, RL ;

PAOLI, TL .

APPLIED PHYSICS LETTERS, 1986, 49 (20) :1390-1392

[8] SUBSTRATE-TEMPERATURE DEPENDENCE OF GAAS, GALNAS, AND GAALAS GROWTH-RATES IN METALORGANIC MOLECULAR-BEAM EPITAXY [J].

KOBAYASHI, N ;

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ALEXANDRE, F ;

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APPLIED PHYSICS LETTERS, 1987, 51 (23) :1907-1909

[9] LARGE-OPTICAL-CAVITY (A1GA)AS-GAAS HETEROJUNCTION LASER DIODE - THRESHOLD AND EFFICIENCY [J].

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HAWRYLO, FZ ;

LOCKWOOD, HF .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :561-+

[10] PROPERTIES OF INXGA1-XAS-GAAS STRAINED-LAYER QUANTUM-WELL-HETEROSTRUCTURE INJECTION-LASERS [J].

LAIDIG, WD ;

LIN, YF ;

CALDWELL, PJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (01) :33-38

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