SUBSTRATE-TEMPERATURE DEPENDENCE OF GAAS, GALNAS, AND GAALAS GROWTH-RATES IN METALORGANIC MOLECULAR-BEAM EPITAXY

被引：111

作者：

KOBAYASHI, N

BENCHIMOL, JL

ALEXANDRE, F

GAO, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 23期

关键词：

D O I：

10.1063/1.98507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1907 / 1909

页数：3

共 13 条

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