MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIMETHYLGALLIUM AS A GA SOURCE

[1] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 783 - 785

[4] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149

[5] FROLOV IA, 1977, INORG MATER+, V13, P632

[6] LAYS MR, 1981, J CRYST GROWTH, V55, P145

[7] MOLECULAR-BEAM EPITAXY OF GAAS AND INP WITH GAS SOURCES FOR ARSINE AND P [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2729 - 2733

[8] METALORGANIC CVD OF GAAS IN A MOLECULAR-BEAM SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 30 - 34

[1] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 783 - 785

[4] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149

[5] FROLOV IA, 1977, INORG MATER+, V13, P632

[6] LAYS MR, 1981, J CRYST GROWTH, V55, P145

[7] MOLECULAR-BEAM EPITAXY OF GAAS AND INP WITH GAS SOURCES FOR ARSINE AND P [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2729 - 2733

[8] METALORGANIC CVD OF GAAS IN A MOLECULAR-BEAM SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 30 - 34