A COMPARATIVE-STUDY OF GA(CH3)3 AND GA(C2H5)3 IN THE MOMBE OF GAAS

被引:166
作者
PUTZ, N
HEINECKE, H
HEYEN, M
BALK, P
WEYERS, M
LUTH, H
机构
[1] RHEIN WESTFAL TH AACHEN,BEREICH SONDERFORSCH 202,D-5100 AACHEN,FED REP GER
[2] RHEIN WESTFAL TH AACHEN,INST PHYS 2,D-5100 AACHEN,FED REP GER
关键词
D O I
10.1016/0022-0248(86)90118-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:292 / 300
页数:9
相关论文
共 18 条
[1]  
ARENS G, UNPUB
[2]   ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].
CALAWA, AR .
APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703
[3]   CHARACTERIZATION OF FAAS EPITAXIAL LAYERS BY LOW-PRESSURE MOVPE USING TEG AS GA SOURCE [J].
CHANG, CY ;
SU, YK ;
LEE, MK ;
CHEN, LG ;
HOUNG, MP .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :24-29
[4]   HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J].
DAPKUS, PD ;
MANASEVIT, HM ;
HESS, KL ;
LOW, TS ;
STILLMAN, GE .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :10-23
[5]   EPITAXIAL-FILMS GROWN BY VACUUM MOCVD [J].
FRAAS, LM ;
MCLEOD, PS ;
CAPE, JA ;
PARTAIN, LD .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :490-496
[6]   ORIGIN OF SURFACE-DEFECTS ON MOLECULAR-BEAM EPITAXIALLY GROWN GAAS [J].
ITO, T ;
SHINOHARA, M ;
IMAMURA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L524-L526
[7]  
KEUCH TF, 1984, J CRYST GROWTH, V68, P148
[8]  
KUDOU Y, 1984, 16TH C SOL STAT DEV, P687
[9]   COMPENSATION EFFECTS IN SI-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
NOTTENBURG, R ;
BUHLMANN, HJ ;
FREI, M ;
ILEGEMS, M .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :71-73
[10]   GAAS GROWTH IN METAL-ORGANIC MBE [J].
PUTZ, N ;
VEUHOFF, E ;
HEINECKE, H ;
HEYEN, M ;
LUTH, H ;
BALK, P .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :671-673